Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Silicon Carbide “super” Junction Transistors Operating at 500 °c

1200 V/ 3 mm active-area SiC “Super” Junction Transistors (SJTs) display current gains as high as 88 and majority carrier operation up to 250 °C. The SJT operation shifts from purely unipolar to bipolar-mode at temperatures ≥ 300 °C. The leakage currents at a blocking voltage of 1200 V remain below 100 μA, even at 325 °C. Temperature-independent turn-on and turn-off times < 15 ns are measured u...

Fully differential cryogenic transistor amplifier

We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K – 300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN < 0.8 K at 4 k source resistance and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 W,...

Silicon-Carbide-Based Closed-Loop Class-D Power Amplifier

An Ultra High CMRR Low Voltage Low Power Fully Differential Current Operational Amplifier (COA)

this paper presents a novel fully differential (FD) ultra high common mode rejection ratio (CMRR) current operational amplifier (COA) with very low input impedance. Its FD structure that attenuates common mode signals over all stages grants ultra high CMRR and power supply rejection ratio (PSRR) that makes it suitable for mixed mode and accurate applications. Its performance is verified by HSPI...

Silicon Nitride and Silicon Carbide